Осаждение алмазных пленок химическим газофазным методом (CVD-метод) на твердосплавный режущий инструмент

 

22. US 8,551,890

 
A CVD showerhead that includes a circular inner showerhead and at least one outer ring showerhead. At least two process gas delivery tubes are coupled to each showerhead. Also, a dual showerhead that includes a circular inner showerhead and at least one outer ring showerhead where each showerhead is coupled to oxygen plus a gas mixture of lead, zirconium, and titanium organometallics. A method of depositing a CVD thin film on a wafer. Also, a method of depositing a PZT thin film on a wafer.

 
23.US 5,749,966

 
An improved plasma enhanced chemical vapor deposition (CVD) reactor is provided for the synthesis of diamond and other high temperature materials such as boron nitride, boron carbide and ceramics containing oxides, nitrides, carbides and borides, or the like. An aspect of the present method enables a plasma to substrate distance to be optimized for a given surface. This has been found to enable a substantially uniform thin film coating of diamond or like material to be deposited over a substrate.

 

24. US 5,505,158

 
A novel apparatus and method for the cyclic growth-etch deposition of diamond on a substrate by flame chemical vapor deposition (CVD) is developed. The cyclic growth-etch diamond deposition is accomplished by placing a suitable substrate to be coated under a CVD flame and providing a disk or face plate or other shapes having one or more teeth (or holes) wherein upon rotation of the disk, or face plate, or other shape, the teeth attached to the disk, or face plate, or other shape obstruct the path of the CVD flame from contacting the substrate at a desired time scale of .tau..sub.growth and t.sub.cycle to produce high quality (FWHM of 1-3.5 cm.sup.-1) diamond.

 

25. US 5,154,945

 
Infrared lasers are used to deposit diamond thin films onto a substrate. In one embodiment, the deposition of the film is from a gas mixture of CH.sub.4 and H.sub.2 that is introduced into a chemical vapor deposition chamber and caused to flow over the surface of the substrate to be coated while the laser is directed onto the surface. In another embodiment, pure carbon in the form of soot is delivered onto the surface to be coated and the laser beam is directed onto the surface in an atmosphere that prevents the carbon from being burned to CO.sub.2.

 

26. JP 2014-152394

 
To provide a diamond film body which can be provided easily on various components, a diamond film component which has a diamond film body fixed thereon, and a production method of them. 
SOLUTION: A diamond film body 1 is produced, which includes a diamond film 3 formed by vapor phase synthesis on the surface of a substrate which is removed after forming a plating layer, and a plating layer 4 formed on the surface of the diamondfilm 3. Further, a diamond film component is produced by fixing the plating layer of the diamond film body 1 and the surface of the component by adhesion means such as an adhesive

 

 

 

 

 

27. US 5260106 A

 
A diamond film is deposited on a surface of a substrate. The diamond film is attached securely to the substrate by forming a first layer on the surface comprising a mixture of a main component of the substrate and a sintering reinforcement agent for diamond, then forming a second layer comprising a mixture of said agent and diamond on said first layer, and finally forming the diamond film on the second layer.

 

28. US 20060228479

 
Diamonds are used to nucleate diamond and diamond-like carbon films in a chemical vapor deposition process using bias enhancement. A negative bias is applied to the substrate, such that a cationic form of the diamond is accelerated toward the substrate during the nucleation phase of the deposition. In this manner, the diamondoid may be embedded or partially embedded in the substrate and/or growing film, increasing the adhesion of the film to the substrate. According to the present embodiments, it is not necessary to mechanically pre-seed the substrate for nucleation purposes.

 

29. WO2014196095

 
Provided is a method for producing a thin film, whereby it becomes possible to achieve both the reduction in concentration of carbon impurities and a high film formation speed and it also becomes possible to produce different crystal structures in accordance with the intended use steadily. According to the present invention, a method for producing an oxide crystal thin film is provided, which comprises a step of supplying raw material microparticles into a film formation chamber by the action of a carrier gas to form an oxide crystal thin film on a film formation sample placed in the film formation chamber, wherein the raw material microparticles are produced by transforming a raw material solution, which is a solution comprising a gallium compound and/or an indium compound and water, into microparticles, and wherein the gallium compound and/or the indium compound is a bromide or an iodide. 

30. US 08784766

 
Iron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

 

 

 

 

 

 

31. CN 102719804

 
The invention relates to a growing device of gas inner circulation type hot wire CVD diamond films. The device comprises a sealed vacuum chamber provided with a reaction chamber inside. A fan is arranged at the top end of the inner wall of the reaction chamber, and a hot wire array composed of a plurality of parallel vertical tungsten wires is arranged below the fan; two ends of the hot wire array are connected with direct current, a substrate plate is arranged below the hot wire array, and a thermocouple is arranged on the substrate plate; an air inlet is arranged on the outer wall of the vacuum chamber on the upper side portion of the fan; and an air pumping opening is arranged on the lower side portion of the outer wall of the vacuum cavity. According to the growing device, large area and high speed growth of diamond films can be achieved, and consumption of hydrogen is reduced.

 

 

32.WO2014157560

 
The present invention provides a coated tool which is obtained by coating the surface of a base with a diamond-like carbon film. The diamond-like carbon film has a nanoindentation hardness of from 50 GPa to 100 GPa (inclusive); the content of hydrogen atoms and the content of nitrogen atoms in the diamond-like carbon film decrease from the base side toward the thickness direction; and the surface of the diamond-like carbon film has a hydrogen atom content of 0.5% by atom or less and a nitrogen atom content of 2% by atom or less. 
(FR)La présente invention concerne un outil revêtu qui est obtenu par revêtement de la surface d'une base par un film de carbone de type diamant. Le film de carbone de type diamant a une dureté de nano-indentation de 50 GPa à 100 GPa (bornes incluses); la teneur des atomes d'hydrogène et la teneur des atomes d'azote dans le film de carbone de type diamant diminuent à partir du côté de base vers la direction d'épaisseur; et la surface du film de carbone de type diamant a une teneur en atome d'hydrogène de 0,5 % atomique ou moins et une teneur en atome d'azote de 2 % atomique ou moins.

 

33. JP 2011105585

 
PROBLEM TO BE SOLVED: To provide a technique for forming diamond films in a state wherein they are not affected by a component of a member and the like on a base member such as tool materials including cemented carbide or structural materials consisting of iron group metals. 
SOLUTION: A substrate for deposition of the invention is for depositing CVD diamond in which a coating layer of holding and containing a seed diamond crystal in the matrix of the coating layer is joined to the surface of a base material comprising hard materials, wherein (1) the average particle size of diamond particles as the seed diamond crystal is 1 m, (2) the matrix comprises one or more first metal species selected from a first metal group consisting of Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W, and/or a first metal compound of being a compound of the first metal species and a nonmetallic substance selected from boron, carbon and nitrogen, and wherein the diamond particles are dispersed in the matrix, and (3) a diffusion layer generated by diffusion of a metal atom of the first metal group and a metal atom constituting the hard material, or of either one of them is formed in the junction of the hard material and the coating layer.

 

 

 

 

 

 

 

 

 

 

 

 

Исходные данные найденных патентных источников информации

1. RU 2105379

 

 

 

 

 

 

 

 

 

 

2.RU 2158037

 

 

 

 

 

 

 

 

 

 

 

3.RU 2158036

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4. RU 2054056

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5. RU 2023325

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6. RU 2045474

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7. RU 2118997

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

8. RU 2497981

 

 

 

 

 

 

 

 

9. RU 2130823

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10. RU 2497978

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

11. RU 2529141

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

12. RU 2389833

 

 

 

 

 

 

 

 

 

13.US 5,852,341

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

14. US 6,204,595

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

15. US 5,571,616

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

16. US 5,571,615

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

17. US 5,273,788

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

18. US 6,447,843

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

19. US 5,204,210

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20. US 5,270,077

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

21. US 8,597,732

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

22. US 8,551,890

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

23. US 5,749,966

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

24. US 5,505,158

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25. US 5,154,945 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

26. JP 2014-152394

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

27. US 5260106 A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

28. US 20060228479

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

29. WO2014196095

 

 

 

30. US 08784766

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

31. WO2014157560

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

33. JP 2011105585

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

32. CN 102719804